SODIMM Notebook Memory Kingston 4GB CL19 DDR4 2666MHz 1.2V

1,290.00 ден

KVR26S19S6/4 as a 512M x 64-bit (4GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 512M x 16-bit FBGA components. The SPD is programmed to JEDEC
standard latency DDR4-2666 timing of 19-19-19 at 1.2V. This
260-pin SODIMM uses gold contact fingers. The electrical and
mechanical specifications are as follows:

Опис

FEATURES
• Power Supply: VDD = 1.2V Typical
• VDDQ = 1.2V Typical
• VPP = 2.5V Typical
• VDDSPD = 2.2V to 3.6V
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die VREFDQ generation and calibration
• Single-rank
• On-board I2 serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Fly-by topology
• Terminated control command and address bus
• PCB: Height 1.18” (30.00mm)
• RoHS Compliant and Halogen-Free

SPECIFICATIONS
CL(IDD) – 19 cycles
Row Cycle Time (tRCmin) – 45.75ns(min.)
Refresh to Active/Refresh
Command Time (tRFCmin) – 350ns(min.)
Row Active Time (tRASmin) – 32ns(min.)
Maximum Operating Power – TBD W*
UL Rating – 94 V – 0
Operating Temperature – 0o C to +85o C
Storage Temperature – -55o C to +100o C

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